On the topic of working with Metal Oxide Semiconductor (MOS) memory devices and Complementary Metal Oxide Semiconductor (CMOS) memory devices, choose the option that best describes which memory device is more sensitive to static-electricity discharges and voltage spikes.

A.
MOS memory devices are more sensitive to static-electricity discharges and voltage spikes than CMOS memory devices.

B.
CMOS memory devices are more sensitive to static-electricity discharges and voltage spikes than MOS memory devices.

C.
MOS memory devices and CMOS memory devices have equal levels of sensitivity towards static-electricity discharges and voltage spikes.

D.
All of the above

Explanation:
CMOS memory devices are more sensitive to static-electricity discharges and voltage spikes than MOS memory devices. With CMOS memory devices, incorrect handling procedures can cause damage to the device’s inputs.
References:
Charles J. Brooks, Server+ Certification Exam Cram 2 (Exam SK0-002), QUE Publishing, Indianapolis, 2006, pp. 393-394.