On the topic of MOS and CMOS memory devices, identify the statement that is
FALSE

A.
MOS memory devices require a continuous base current to maintain their memory states.

B.
CMOS memory devices are less efficient than MOS memory devices because they are more sensitive to static damage than MOS memory devices.

C.
MOS memory devices experience a net transfer loss from emitter to collector.

D.
None of the above

Explanation:
Even though CMOS memory devices are more sensitive to static damage than MOS memory devices, they are still more efficient, simply because they do not require a base current to maintain their memory states.
Incorrect
Answers:

A: This statement is TRUE.
C: This statement is TRUE.
D: B is FALSE.
References:
Charles J. Brooks, Server+ Certification Exam Cram 2 (Exam SK0-002), QUE Publishing, Indianapolis, 2006, pp. 393-394.